Figure 4. The electron density n0, calculated after Eq. (2) is presented as a function of temperature: the effect of both deep (EL1) and shallow (EL2) trapping levels are clearly shown at 0.22eV and 0.013eV respectively

From

Electric Properties of n-GaN: Effect of Different Contacts on the Electronic Conduction

S. Abdalla, F. Marzouki, S. Al-ameer, S. Turkestani

International Journal of Physics. 2013, 1(2), 41-48 doi:10.12691/ijp-1-2-3