## Figures index

#### From

#### Electric Properties of n-GaN: Effect of Different Contacts on the Electronic Conduction

*International Journal of Physics*.

**2013**, 1(2), 41-48 doi:10.12691/ijp-1-2-3

**Fig****ure****1.**I –VT curves for n-type Al-GaN for different temperatures. The slope of these lines increases with temperature T and is directly proportional to the electrical conductivity σΩ^{}^{1}cm^{-1}).

**Fig****ure****2.**Electrical conductivity of n-GaN as a function of temperature: The solid line represents the calculated values after equation (1); it is calculated using Eq. (1) with 2 distinct activation energies at ΔE = 0.23 EV and 0.013EV while open squares designate the experimental values

**Fig****ure****3.**Fermi level energy as a function of temperature: at high temperature EF varies linearly as EF = 0.17 – 2.63 x10-4TeV and at low temperature EF varies linearly as EF = 0.0897 + 5.34 x10-4eV

**Fig****ure****4.**The electron density n_{0}, calculated after Eq. (2) is presented as a function of temperature: the effect of both deep (EL1) and shallow (EL2) trapping levels are clearly shown at 0.22eV and 0.013eV respectively

**Fig****ure****5.**The electron mobility, μ as a function of temperature; two clear scattering mechanisms are present: (1) at low temperatures where μα^{T0.95}(scattering on impurity centers) and (2) at high temperatures where μα T-1.14(scattering on lattice defects)

**Fig****ure****6.**I – VT characteristics of Au-nGaN; solid lines represent calculated values after equation (7) at 80K and at 300K. Triangles symbolize the experimental values at 300K and squares denote the experimental values at 80K

**Fig****ure****7.**the natural logarithm of the current density ln(J) as a function of the applied potential*V*_{appl}for different temperatures

**Fi****gure****8****.**Energy band-diagram corresponding to room temperature for Au-n-GaN metal-semiconductor contact

**Fig****ure****9.**the Deep level transie*n*t spectroscopy signals as a function of temperature

**Fig****ure****10.**The temperature dependence of the ideality factor, n: Open triangles stand for values obtained after the slope of ln J curves when we neglecting the series resistance Rs and open stars represent n as fitting parameter of I-V curves with Eq. (7) when neglecting the presence of Rs. where Rs0 and α are constants: R_{s0}= 21.18 Ω and α = 3.85 x 10^{-3}K^{-1}. This decaying behavior indicates that Rs has some semiconducting properties.