Figure 5. The electron mobility, μ as a function of temperature; two clear scattering mechanisms are present: (1) at low temperatures where μα T0.95 (scattering on impurity centers) and (2) at high temperatures where μα T-1.14(scattering on lattice defects)

From

Electric Properties of n-GaN: Effect of Different Contacts on the Electronic Conduction

S. Abdalla, F. Marzouki, S. Al-ameer, S. Turkestani

International Journal of Physics. 2013, 1(2), 41-48 doi:10.12691/ijp-1-2-3