Figure 4. Capacitance profile as a function of carrier recombination velocity at the junction for different magnetic field values ( τ=10-5 s ; 𝛍=1350 cm2 .V-1 s-1 )

From

Influence of the Magnetic Field and Optimum Base Thickness of a Series Vertical-Junction Silicon Solar Cell under Polychromatic Illumination and Magnetic Field on Capacitance: Determination of Transition and Dark Capacitances

Dibor FAYE, Pape DIOP, Babou DIONE, Mamadou yacine BA

American Journal of Energy Research. 2025, 13(3), 80-85 doi:10.12691/ajer-13-3-1