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Self-Powered, High-Speed Photodetection Using Sn (5%) Doped Nanocrystalline CdS Thin Films Deposited by Vacuum Evaporation on FTO

Baljinder Singh, Mayank Arora, Krishan Kumar

Journal of Materials Physics and Chemistry. 2025, 13(1), 22-28 doi:10.12691/jmpc-13-1-4
  • Figure 1. (a) X-ray diffraction patterns (b) Raman spectra of nc-CdS:Sn 5% thin film
  • Figure 2. Optical transmission spectra for the nc-CdS:Sn 5% thin films deposited at room temperature (300 K). The inset shows the graph plotting (hνα)2 against hν
  • Figure 3. (a) FE-SEM image and (b) EDAX spectra of nc-CdS:Sn 5% thin film
  • Figure 4. I-V characteristics of FTO/nc-CdS:Sn 5% Schottky diode heterojunctions measured in dark and under white light illumination. The inset shows the ln I-V plot under forward-bias condition
  • Figure 5. Shows the photovoltaic characteristics of the FTO/nc-CdS:Sn 5% Schottky diode heterojunction under halogen light illumination with an intensity of 5.6 mW/cm²
  • Figure 6. Schematic illustration of our experimental set-up for photoresponse detection. The photoresponse of the FTO/nc-CdS:Sn 5% device under pulsed light at frequencies of (b) 50 Hz, (c) 100 Hz, (d) 300 Hz, and (e) 700 Hz. (f) Rising and falling edges for estimating rise and fall times [22]
  • Figure 7. Energy band diagram of FTO/nc-CdS:Sn 5% device