Figure 4. I-V characteristics of FTO/nc-CdS:Sn 5% Schottky diode heterojunctions measured in dark and under white light illumination. The inset shows the ln I-V plot under forward-bias condition

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Self-Powered, High-Speed Photodetection Using Sn (5%) Doped Nanocrystalline CdS Thin Films Deposited by Vacuum Evaporation on FTO

Baljinder Singh, Mayank Arora, Krishan Kumar

Journal of Materials Physics and Chemistry. 2025, 13(1), 22-28 doi:10.12691/jmpc-13-1-4