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Fig
ure
6
.
I-V characteristics for SnO
2
:In
2
O
3
/P-Si and SnO
2
:In
2
O
3
/porous-Si heterojunction Solar Cell at RT and 773 K annealing temperatures in case of dark and under illumination
From
Annealing Effect on (SnO
2
)
0.3
:(In
2
O
3
)
0.7
Solar Cell Prepared by PLD Technique
Abdulmajeed E. Ibrahim, Kadhem A. Aadim, Qutaibah A. Abduljabbar
International Journal of Physics
.
2017
, 5(4), 110-115 doi:10.12691/ijp-5-4-2
Previous
Figure
6
of 6 (
Figures index
)