Figure 6. Huang–Rhys factor S as a function of screening length λ for GaAs and CdTe

From

Polaronic and Screening Effects on Acceptor Impurities in Polar Semiconductors: A Variational Approach with the Mgecsc Potential

Mamadou COULIBALY, Ibrahima Gueye FAYE, Bassirou LO

International Journal of Physics. 2025, 13(4), 91-104 doi:10.12691/ijp-13-4-2