Figure 34. I-V characteristics of the Pt/GaOx/GaN-based Schottky diode sensor device under different concentrations of H2 gas at (a) 300 (b) 373 and (c) 523 K (d) Schematic energy band diagrams of the GaN sensor in air and in a H2 gas ambience [85]

From

Review of GaN Nanowires Based Sensors

Ahmed M. Nahhas

American Journal of Nanomaterials. 2020, 8(1), 32-47 doi:10.12691/ajn-8-1-4