Figure 8. Pulsed I-V characteristics of AlGaN/GaN HEMTs with Vgs ranging from -3.0 to 0 V at 0.5 V step before hydrogen treatment (a) and after hydrogen treatment (b) [84]

From

Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2019, 7(1), 10-21 doi:10.12691/ajn-7-1-2