Figure 7. I-V characteristics of AlGaN/GaN HEMTs before/after hydrogen treatment (a) Output characteristics with Vgs ranging from -3.0 to 0 V at 0.5 Vstep (b) Transfer characteristics and transconductance at Vds = 5 V (c) Vgd characteristics (d) Vgs characteristics [84]

From

Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2019, 7(1), 10-21 doi:10.12691/ajn-7-1-2