Figure 29. I-V characteristics of Schottky contact for AlGaN/GaN HEMTs (a) reverse (b) forward before and after the 18 MeV Ni ions irradiation [94]

From

Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2019, 7(1), 10-21 doi:10.12691/ajn-7-1-2