Figure 28. AlGaN/GaN HEMTs before irradiation (a) and after irradiation 18 MeV Ni ions at 2.8 × 1013 ion/cm2 (b) [94]

From

Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2019, 7(1), 10-21 doi:10.12691/ajn-7-1-2