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Figure 27.
C-V characteristics of un-passivated/passivated AlGaN/GaN HEMTs with L
g
= 2 µm at
f
m
= 10 kHz [93]
From
Review of AlGaN/GaN HEMTs Based Devices
Ahmed M. Nahhas
American Journal of Nanomaterials
.
2019
, 7(1), 10-21 doi:10.12691/ajn-7-1-2
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