Figure 27. C-V characteristics of un-passivated/passivated AlGaN/GaN HEMTs with Lg = 2 µm at fm = 10 kHz [93]

From

Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2019, 7(1), 10-21 doi:10.12691/ajn-7-1-2