Figure 23. I-V characteristics of device measured before/after reverse gate bias state stress at VGS =-7 V and VDS =100 mV for a time duration of 15 s [92]

From

Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2019, 7(1), 10-21 doi:10.12691/ajn-7-1-2