Figures index

From

Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2019, 7(1), 10-21 doi:10.12691/ajn-7-1-2
  • Figure 1. Schematic cross section of AlGaN/GaN HEMTs [82]
  • Figure 2. I-V measurements of AlGaN/GaN HEMTs with different LG [82]
  • Figure 3. Device layout and configuration of four-terminal sensing to measure the gate resistance over a single finger for six finger devices [83]
  • Figure 4. Raman and GRT measured temperatures at power densities up to 3.5 W/mm [83]
  • Figure 5. Cross section of AlGaN/GaN HEMTs device (a) and top view of the investigated device (b) [29]
  • Figure 6. I-V characteristics for the device in temperatures ranging from 27 to 440°C [29]
  • Figure 7. I-V characteristics of AlGaN/GaN HEMTs before/after hydrogen treatment (a) Output characteristics with Vgs ranging from -3.0 to 0 V at 0.5 Vstep (b) Transfer characteristics and transconductance at Vds = 5 V (c) Vgd characteristics (d) Vgs characteristics [84]
  • Figure 8. Pulsed I-V characteristics of AlGaN/GaN HEMTs with Vgs ranging from -3.0 to 0 V at 0.5 V step before hydrogen treatment (a) and after hydrogen treatment (b) [84]
  • Figure 9. Optical image of AlGaN/GaN HEMT structure [85]
  • Figure 10. I-V characteristics of AlGaN/GaN HEMTs [85]
  • Figure 11. Device structure of AlGaN/GaN HEMTs [86]
  • Figure 12. Double directional C-V characteristics (a) extracted carrier concentration distribution at different depths (b) [86]
  • Figure 13. Device structure of AlGaN/GaN HEMTs with/without AlN [87]
  • Figure 14. PL spectra of AlGaN/GaN HEMTs structure with/without AlN [87]
  • Figure 15. Device structure of AlGaN/GaN-on-Si HEMTs [88]
  • Figure 16. I-V characteristics for AlGaN/GaN-on-Si HEMTs [88]
  • Figure 17. I-V characteristics for AlGaN/GaN HEMTs before/after gate annealing [89]
  • Figure 18. C-V characteristics for AlGaN/GaN HEMTs before/after gate annealing [89]
  • Figure 19. Surface morphology images of ohmic contact (Ti/Al/ Cr /Au), (Ti/Al/ Pt /Au), (Ti/Al/ Ni /Au) [90]
  • Figure 20. Specific contact resistance for different ratio of Ni-based ohmic contacts (1:5:4:3, 1:5:2:3, 1:7.5:2:2.5) over thin/thick AlGaN [90]
  • Figure 21. Schematic of AlGaN/GaN HEMTs with/without Al2O3 below Schottky gate [91]
  • Figure 22. C-V characteristics for AlGaN/GaN HEMTs [91]
  • Figure 23. I-V characteristics of device measured before/after reverse gate bias state stress at VGS =-7 V and VDS =100 mV for a time duration of 15 s [92]
  • Figure 24. Buffer leakage current measured at VGS =-7V (off-state condition) [92]
  • Figure 25. I-V characteristics of device with long (5 ms), medium (3.3 ms) and short (2.5 ms) integration time after application of reverse gate voltage stress [92]
  • Figure 26. Schematic of AlGaN/GaN HEMTs [93]
  • Figure 27. C-V characteristics of un-passivated/passivated AlGaN/GaN HEMTs with Lg = 2 µm at fm = 10 kHz [93]
  • Figure 28. AlGaN/GaN HEMTs before irradiation (a) and after irradiation 18 MeV Ni ions at 2.8 × 1013 ion/cm2 (b) [94]
  • Figure 29. I-V characteristics of Schottky contact for AlGaN/GaN HEMTs (a) reverse (b) forward before and after the 18 MeV Ni ions irradiation [94]
  • Figure 30. Schematic of AlGaN/GaN HEMTs [95]
  • Figure 31. I-V characteristics of AlGaN/GaN HEMTs [95]