Figure 4. Fabrication schematics of the hybrid nanocrystal/III nitride based nano LED: (a) after Ar ion beam etching, (b) after encompassing the nanostructures in HSQ/SiO2 for device insulation, (c) after removal of the protective Ni masking cap (d) after formation of transparent top metal contact and nanocrystal integration [86]

From

Review of GaN Nanostructured Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2018, 6(1), 1-14 doi:10.12691/ajn-6-1-1