Figure 10. O-polar n-ZnO/N-polar p-GaN heterostructure with PIL: (a) Schematic drawing, Fixed charges induced by PSP and PPE polarization (b) Spatial distribution of fixed polarization charges and ionized dopants [89]

From

Review of GaN Nanostructured Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2018, 6(1), 1-14 doi:10.12691/ajn-6-1-1