Figure 1. Principal schematics of the integration technology of a single p-GaN/InGaN/n-GaN nanopyramid: (a) E-beam lithography and RIE hole pattern transfer in SiO2 layer/mask, (b) selective area growth of InGaN nanopyramids, (c) selective p-GaN overgrowth, (d) recessed ohmic bottom contacts [85]

From

Review of GaN Nanostructured Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2018, 6(1), 1-14 doi:10.12691/ajn-6-1-1