Figures index

From

Review of GaN Nanostructured Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2018, 6(1), 1-14 doi:10.12691/ajn-6-1-1
  • Figure 1. Principal schematics of the integration technology of a single p-GaN/InGaN/n-GaN nanopyramid: (a) E-beam lithography and RIE hole pattern transfer in SiO2 layer/mask, (b) selective area growth of InGaN nanopyramids, (c) selective p-GaN overgrowth, (d) recessed ohmic bottom contacts [85]
  • Figure 2. Dependence of the PL emission wavelength for InGaN nanopyramids on the In composition [85]
  • Figure 3. Principal schematics of the hybrid nanocrystal/III-nitride based nanostructured LED structure [86]
  • Figure 4. Fabrication schematics of the hybrid nanocrystal/III nitride based nano LED: (a) after Ar ion beam etching, (b) after encompassing the nanostructures in HSQ/SiO2 for device insulation, (c) after removal of the protective Ni masking cap (d) after formation of transparent top metal contact and nanocrystal integration [86]
  • Figure 5. Micro PL intensity of nano LEDs with 100 (pink circles), 150 (blue circles), and 200 (red circles) nm diameter as a function of Ar-IBE Va [86]
  • Figure 6. FC LED structure: (a) Schematic representation (b) 300 nm (c) 600 nm and (d) 1200 nm SiO2 spheres single layer arrayed on the surface of sapphire (e) A full 4 in. FC LED wafer coated with 1200 nm SiO2 sphere [87]
  • Figure 7. SEM of NPSFC LED: (a) 300 nm, and (b) 600 nm trapezoidal structure [87]
  • Figure 8. PITJ device: (a) Schematic diagram (b) I-V characteristics of Au on n-ZnO, Ni/Au on p-GaN and In on n-GaN [88]
  • Figure 9. (a) EL spectra of LED under various forward bias voltages ranging from 10 V to 50 V (b) Gaussian deconvolution of a representative EL spectrum from LED measured at 50 V (c) EL spectra of LED under forward bias voltages ranging from 10 V to 50 V (d) Relationship between the integrated EL intensity and voltage of two LEDs [88]
  • Figure 10. O-polar n-ZnO/N-polar p-GaN heterostructure with PIL: (a) Schematic drawing, Fixed charges induced by PSP and PPE polarization (b) Spatial distribution of fixed polarization charges and ionized dopants [89]
  • Figure 11. I-V characteristics of Au on n-ZnO, Ni/Au on p-GaN and In on n-GaN [89]
  • Figure 12. (a) SEM imaging of the GaN nanowires placed at the substrate’s edge (b) CCD images of individual nanowires in lasing mode [94]
  • Figure 13. SEM image of a single GaN nanowires placed between gold patterns on a sapphire substrate using a nanomanipulator. The inset shows a magnified image of the nanowires, where “A” denotes the larger diameter end of the nanowires and “B” denotes the smaller diameter end [95]
  • Figure 14. Normalized photoinduced transmission changes in the single and ensemble nanowires [95]
  • Figure 15. Polarization dependent transmission in the single GaN nanowires at a pump fluence of 510 µJ/cm2 and position P2 on the nanowires, E and P denote the pump and probe polarizations [95]
  • Figure 16. Atomistic structures of the GaN nanowires (a) Tri-GaN, (b) Hex-GaN (c) Rect-GaN [96]
  • Figure 17. Band structure for Tri-GaN nanowires with (a) D = 0.88 nm and (b) D = 7.34 nm [96]
  • Figure 18. (a) Bandgap versus transverse dimension D (b) Bandgap versus S/V [96]
  • Figure 19. Schematic of a vertical GaN transistor with three electrodes [97]
  • Figure 20. SEM images of GaN nanowires after wet chemical treatment [97]
  • Figure 21. GaN nanowires on SiC/Si: (a) SEM images, (b) PL spectra of GaN structures grown on [98]
  • Figure 22. Growth schematic of AlGaN nanowires segment on such GaN nanowire template [99]
  • Figure 23. SEM image of GaN/AlGaN nanowires on Si [99]
  • Figure 24. Schematic illustration of the of GaN nanowire GAA transistor fabrication sequence of a GaN nanowire GAA transistor: (a) Structure of GaNOI wafer (b) Formation of GaN nanowire arrays (c) Reduced GaN nanowire arrays (d) Release of GaN nanowire (e) Regrowth of AlGaN/GaN heterostructure on the patterned GaNOI wafer (f) Schematic illustration of the nanodevice [100]
  • Figure 25. Low temperature (10 K) PL and PLE spectra for the m- plane InGaN/GaN QW [109]
  • Figure 26. PL spectra of a 4 µm microdisk in the InGaN as a function of the pulsed laser excitation power [110]
  • Figure 27. (a) Cross sectional schematic of the InGaN/GaN MQWs epilayer structures (b) LT cap layers [111]