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Influence of Growth Parameters on the Structural, Morphological and optical Properties of MgxZn1-xO Prepared by Metal Organic Chemical Vapor Deposition

K. Talla, O. Sakho, P. D. Tall, C. B. Ndao, E. H. O. Gueye, M. B. Gaye, J. K. Dangbegnon, B. D. Ngom, J. R. Botha, A. C. Beye

American Journal of Materials Science and Engineering. 2016, 4(2), 20-25 doi:10.12691/ajmse-4-2-1
  • Figure 1. Low temperature (4.2 K) PL spectra of MgxZn1-xO films (xv=0.2) grown on c-Al2O3 at temperatures of 320 °C to 620 °C using O2 as oxygen source
  • Figure 2. SEM images of the MgxZn1-xO films grown on c-Al2O3 at various temperatures using O2
  • Figure 3. Low temperature (4.2 K) PL spectra of MgxZn1-xO films (xv=0.2) grown on c-Al2O3 with different VI/II ratios and using O2 as oxygen source
  • Figure 4. SEM images of MgxZn1-xO films grown on c-Al2O3 with different VI/II ratios (60-960) using O2.
  • Figure 5. Cross sectional SEM images of MgxZn1-xO thin films grown on c-Al2O3 substrate at different growth rates: 3.3 μm/h, 2.8 μm/h, 1.4 μm/h and 0.5 μm/h using oxygen as oxidant
  • Figure 6. SEM images of MgxZn1-xO grown on c-Al2O3 at different growth rate grown using oxygen at 420 °C and VI/II ratio=60
  • Figure 7. XRD spectra of MgxZn1-xO grown on c-Al2O3 at growth rate of 1.4 μm/h and 0.5 μm/h using oxygen, a growth temperature of 420 °C and VI/II ratio of 60
  • Figure 8. Normalized low temperature PL spectra (4.2 K) of MgxZn1-xO grown on c-Al2O3 at different growth rate (3.3 μm/h, 2.8 μm/h, 1.4 μm/h and 0.5 μm/h) with VI/II ratio of 60 and at substrate temperature of 420 °C