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From

Optimization of the Properties of the Back Surface Field of a Cu(In,Ga)Se2 Thin Film Solar Cell

Alain Kassine Ehemba, Mouhamadou Mamour Socé, Jean Jude Domingo, Salif Cisse, Moustapha Dieng

American Journal of Energy Research. 2017, 5(2), 57-62 doi:10.12691/ajer-5-2-5
  • Figure 1. Configurations of the Cu(In,Ga)Se2 solar cells (a) without BSF (b) with BSF
  • Figure 2. Spectrum Incident
  • Figure 3. Absorption coefficients of CdS and CIGS layers
  • Figure 4. Characteristics J-V of CIGS solar cells with BSF and without BSF
  • Figure 5. Quantum efficiencies of solar cells with BSF and without BSF
  • Figure 6. Spectral Response of the CIGS solar cell with BSF and without BSF
  • Figure 7. Variation of the macroscopic electric parameters according to the thickness of the layer of doped CIGS p+
  • Figure 8. Variation of the macroscopic electric parameters according to the doping concentration acceptors of the CIGS p+ doped layer