Tables index

From

Influence of the Recombination Assisted by Tunneling Effect and Influence of the Surface Treatment on the Electric Performances of Cu-Rich Solar Cells Based on Cu(In,Ga)Se2

Mouhamadou M. Soce, Alain K. Ehemba, Ousmane Diagne, Djimba Niane, Moustapha Dieng

American Journal of Energy Research. 2017, 5(2), 51-56 doi:10.12691/ajer-5-2-4
  • Table 1. Simulation Parameter of our solar cell Cu (In, Ga) Se2 [4]
  • Table 2. Bulk Defect and Interface Properties [4]
  • Table 3. Bulk Defect and Interface Properties
  • Table 4. Simulation parameter of our solar cell CIGS
  • Table 5. Bulk Defect and Interface Properties
  • Table 6. Bulk Defects and interface properties
  • Table 7. Comparative table of the electrical performance of the Cu-rich solar cell with or without tunnel recombination
  • Table 8. Comparative table of electrical performance of solar cell Cu-rich with or without tunneling effect recombination
  • Table 9. Comparative table of the electrical performances of Cu-rich cell solar, Cu-poor and Cu-rich with surface treatment (neutral defects)
  • Table 10. Comparative table of the electrical performance of the Cu-rich solar cell, Cu-poor and Cu-rich with treatment (charged defect)