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1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor

Siavash Heydarzadeh1,, Pooya Torkzadeh1

1Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran

American Journal of Electrical and Electronic Engineering. 2013, 1(3), 37-41. DOI: 10.12691/ajeee-1-3-1
Published online: August 25, 2017

Abstract

This work offers the use of an active inductor and capacitor to build RF band-pass filter with 0.18μm and TSMC process. Based on the proposed structure, a prototype 1 GHz active filter designed and simulated in a 0.18μm CMOS technology. Simulation results for the designed RF band-pass filter show S21 > 19dB and consuming power less than 14 mW from 1.8 V supply voltage. The absolute values of reflection parameters (|S11| and |S22|) are about 60 dB. Low-bandwidth linear noise at output node are less than -170 dB and Advanced Design System (ADS) used to produce 1 GHz band-pass active filter simulation results.

Keywords:

active filter, active inductance, active capacitance, 0.18 μm CMOS technology, ADS
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