Figure 13. Surface profile of etched 6μm deposited wafer after 1 hour of RIE showing (a) Amount of SU-8 removed is 4.3μm. The final remaining SU-8 on the surface had a thickness of (6.0 – 4.3) μm = 1.7 μm. (b) Average Etch depth of 63.669 microns

From

Etching Techniques for Thinning Silicon Wafer for Ultra Thin High Efficiency Interdigitated Back Contact Solar Cells

Iduabo John Afa, Gema López, Pablo Rafael Ortega Villasclaras

Journal of Optoelectronics Engineering. 2015, 3(1), 7-14 doi:10.12691/joe-3-1-2