Figures index

From

Photovoltaic Properties of Aluminum Doped Zinc Oxide Electrodes Based on Variation of Aluminum Impurities in the Semiconductor

M. D. Tyona, R. U. Osuji, C. D. Lokhande, F. I. Ezema

Journal of Materials Physics and Chemistry. 2018, 6(1), 9-16 doi:10.12691/jmpc-6-1-2
  • Figure 1. Schematic diagram of the experimental setup for deposition of AZO thin films by chemical bath deposition technique
  • Figure 2. AZO film thickness variation with deposition period for different Al concentrations (a) 1 at. % (b) 2 at. % and (c) 5 at. % (d) photographs of the annealed synthesized AZO thin film with different Al concentrations
  • Figure 3. XRD patterns of AZO with different Al concentration. (a) 0 at.%. (b) 1 at.%. (c) 2 at.%. (d) 5 at. %
  • Figure 4. SEM micrographs of AZO thin films for different Al concentrations. (a) 0 at.% (b) 1 at.%, (c) 2 at.% (d) 5 at.%
  • Figure 5. Absorption spectra of AZO thin film for different Al concentrations. (a) 0 at.%. (b) 1 at.%. (c) 2 at.%. (d) 5 at.%
  • Figure 6. Tauc plot from absorbance spectra of AZO thin film for different Al concentrations. (a) 0 at.%. (b) 1 at.%. (c) 2 at.%. (d) 5 at.%. Inset shows the band gap trend with Al dopant variation in ZnO
  • Figure 7. A schematic diagram showing photoelectrochemical current measurement set-up
  • Figure 8. Current-Potential (I-V) curves of AZO thin films showing current and potential in the dark and under illumination for different Al concentrations (a) 1 at.% (b) 2 at.% and (c) 5 at.%