Figure 50. I-V characteristics, under introduced various concentrations of H2 gas of the GaN sensor device at (a) 300 K and (b) 573 K [90]

From

Review of GaN Nanowires Based Sensors

Ahmed M. Nahhas

American Journal of Nanomaterials. 2020, 8(1), 32-47 doi:10.12691/ajn-8-1-4