Figure 25. I-V characteristics of device with long (5 ms), medium (3.3 ms) and short (2.5 ms) integration time after application of reverse gate voltage stress [92]

From

Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas

American Journal of Nanomaterials. 2019, 7(1), 10-21 doi:10.12691/ajn-7-1-2