Figure 6. (a) A diagram of a CMS NW, which is composed of n-GaN, InxGa1-xN, GaN, p-AlGaN, and p-GaN; (b) normalized EL spectra of the LEDs. Panel (c) schematic and OM images of the InGaN nanowire LED device under forward bias (V = 19, 9, and 11 V for x = 0.06, 0.28, and 0.43, respectively); panel (d) normalized EL spectra of each device in panel (c) [42]

From

Review of Recent Advances of GaN Nanostructured Based Devices

M. Abdulrahman, A. Khalil, Ahmed M. Nahhas

American Journal of Nanomaterials. 2023, 11(1), 41-50 doi:10.12691/ajn-11-1-3