Figure 4. Emission rate of holes as a function of the depth of the base for different doping of the CIGSe layer

From

Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell

Djimba Niane, Alain K. Ehemba, Salif Cissé, Ousmane Diagne, Moustapha Dieng

American Journal of Energy Research. 2018, 6(1), 30-34 doi:10.12691/ajer-6-1-5