Figure 2. Emission rate of electrons according of the depth of the CIGSe base for different doping of the CIGSe layer

From

Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell

Djimba Niane, Alain K. Ehemba, Salif Cissé, Ousmane Diagne, Moustapha Dieng

American Journal of Energy Research. 2018, 6(1), 30-34 doi:10.12691/ajer-6-1-5