Open Access Peer-reviewed

1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor

Siavash Heydarzadeh1,, Pooya Torkzadeh1

1Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran

American Journal of Electrical and Electronic Engineering. 2013, 1(3), 37-41. DOI: 10.12691/ajeee-1-3-1
Published online: August 25, 2017

Abstract

This work offers the use of an active inductor and capacitor to build RF band-pass filter with 0.18μm and TSMC process. Based on the proposed structure, a prototype 1 GHz active filter designed and simulated in a 0.18μm CMOS technology. Simulation results for the designed RF band-pass filter show S21 > 19dB and consuming power less than 14 mW from 1.8 V supply voltage. The absolute values of reflection parameters (|S11| and |S22|) are about 60 dB. Low-bandwidth linear noise at output node are less than -170 dB and Advanced Design System (ADS) used to produce 1 GHz band-pass active filter simulation results.

Keywords:

active filter, active inductance, active capacitance, 0.18 μm CMOS technology, ADS
[1]  Z. Sassi, S. Darfeuille, B. Barelaud, L. Billonnet, B. Jarry, H. Marie, N. T. L. Le, P. Gamand, “2 GHz Tuneable Integrated Differential Active Bandpass Filter on Silicon,” GeMiC , 2005, PP. 90-93.
 
[2]  K. Allidina, Sh. Mirabbasi, “A Widely Tunable Active RF Filter Topology,” ISCAS IEEE conference, 2006, PP. 879-882.
 
[3]  D. Cordova, J. D. l. Cruz, C. Silva, “A 2.3-GHz CMOS High-Q Bandpass Filter Design Using an Active Inductor,” XV Workshop Iberchip, Buenos Aires, Argentina, 2009.
 
[4]  M. Sabaghi, M. Rahnama, M. N. Lahiji, M. S. Miri, Sh. Rezakhani, “Design and Simulation of Differential Active Inductor with 0.18 μm CMOS Technology,” Canadian Journal on Electrical and Electronics Engineering, vol. 2, no. 9, 2011.
 
[5]  Z. Sassi, S. Darfeuille, B. Barelaud, L. Billonnet, B. Jarry, H. Marie, N. T. L. Le, P. Gamand, “2 GHz Tunable Integrated Differential Active Bandpass Filter on Silicon,” GeMiC, 2005.
 
[6]  K. Allidina, Sh. Mirabbasi, “A Widely Tunable Active RF Filter Topology,” Department of Electrical and Computer Engineering University of British Columbia, ISCAS, 2006.
 
[7]  Y. Koutsoyannopoulos, “Novel Si Integrated Inductor and Transformer Structures for RF IC Design,” IEEE International Symposium on Circuits and Systems, vol. 2, pp. 573-576, 1999.
 
[8]  C. Andriesei, L. Goras, “On the Tuning Performance of an Active RF Bandpass Filter,” Acta Technica Napocensis Electronics and Telecommunications, 2008.
 
[9]  G. Zhiqiang, “Design of CMOS Integrated Q-enhanced RF Filters for Multi-Band/Mode Wireless Applications,” Advanced Trends in Wireless Communications, 2005.
 
[10]  Z. Xiong, “Radio Frequency Low Noise and High Q Integrated Filters in Digital CMOS Processes,” A Thesis Presented to The Academic Faculty, Georgia Institute of Technology, 2004.
 
[11]  C. E. Saavedra, W. Yang, “2GHz Bandstop Active Filter Using Operational Trans-conductance Amplifiers,” Department of Electrical and Computer Engineering Queen’s University Kingston, Ontario, Canada, 2010.
 
[12]  M. Ebrahimzadeh, “A Low Voltage High Quality Factor Floating Gate Tunable Active Inductor with Independent Inductance and Quality Factor Tuning,” International Journal of Computer and Electrical Engineering, vol. 3, no. 2, 2011.
 
[13]  H. Xiao, “Recent Integrated Active Inductor Patents,” Recent Patent on Electrical Engineering, 2009.
 
[14]  A. V. Garcia, J. S. Martinez, E. S. Sinencio, “RF Bandpass Filter Design Using Capacitive Degeneration,” Analog and Mixed-Signal Center, Electrical Engineering Department, Texas A&M University, College Station, Texas, USA, 2005.